This inventor holds 1 USPTO granted patent and 13 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yun-Sheng Li: Innovator in Semiconductor Technology
Introduction: Yun-Sheng Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, focusing on innovative structures and methods for chip stacks. His work aims to enhance the efficiency and performance of semiconductor devices.
Latest Patent Applications: Yun-Sheng Li currently has no granted patents. However, he has filed several notable patent applications. One of his latest applications is titled "Through Via Power Delivery Structure for Stacked Chips." This application discloses through via power delivery structures for chip stacks and methods of fabrication thereof. An exemplary stacked chip structure includes a first chip and a second chip. The first chip has a first substrate, a first device layer, and a first interconnect structure. The second chip has a second substrate, a second device layer, and a second interconnect structure. A first through via extends through the first substrate, the first device layer, the first interconnect structure, and into the second interconnect structure. A second through via extends through the first substrate, the first device layer, and into the first interconnect structure. The second through via and the first through via may be electrically connected to the first device layer and the second device layer, respectively, allowing power to be delivered to both layers via these connections.
Another significant application is for a "Semiconductor Device and Method." In this embodiment, a device may include a first structure comprising a first surface and a second surface opposite the first surface. The first structure may include a first substrate and a first through substrate via (TSV) exposed from the second surface of the first substrate. The first TSV may have a first width. The device may also include a second TSV exposed from the second surface of the first structure, where the second TSV has a second width smaller than the first width. Additionally, the device may include a guard ring surrounding each of the first and second TSVs, and a second structure bonded to the first surface of the first structure, where the first surface has first bond pads.
Conclusion: Yun-Sheng Li is an innovative inventor whose work in semiconductor technology is paving the way for advancements in chip design and power delivery systems. His latest patent applications reflect his commitment to enhancing the functionality and efficiency of semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile