This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yun-Kai Lai and Semiconductor Device Innovation.
Introduction
Yun-Kai Lai is an inventor associated with Taichung City, Taiwan, and Vanguard International Semiconductor Corporation. His work includes a patent for a semiconductor structure and a method for forming it.
Latest Patents
Lai is credited with 1 patent: “Semiconductor Structure and Method for Forming the Same.” The invention describes a semiconductor structure with a substrate and an epitaxial layer of a first conductivity type, along with a well region of a second conductivity type. A protruding feature rises from the epitaxial layer, with an insulating structure along its sidewall. An upper electrode surrounds the protruding feature and connects electrically to the epitaxial layer and well region, while a lower electrode sits beneath the substrate. The design brings together these layers and electrodes in a semiconductor device architecture.
Career Highlights
Lai’s listed patent reflects work in semiconductor device structures and fabrication methods. His professional association with Vanguard International Semiconductor Corporation connects his inventive activity to the semiconductor industry.
Collaborations
Chen-Dong Tzou is identified as Lai’s coworker. The available information does not specify whether they collaborated on the patent.
Conclusion
Yun-Kai Lai’s patent focuses on a layered semiconductor structure with carefully arranged regions, insulation, and electrodes, highlighting his contribution to semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile