Hyogo, Japan

Yukio Sugimoto

This inventor holds 1 USPTO granted patent. Top assignee: Sumitomo Metal Industries, Inc.. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukio Sugimoto. Retrieved from https://idiyas.com/inventor/yukio-sugimoto-f7utsrr6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Innovations by Yukio Sugimoto in Silicon Single Crystal Manufacturing

Introduction

Yukio Sugimoto is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of materials science, particularly in the manufacturing of silicon single crystals. His innovative methods have paved the way for advancements in semiconductor technology.

Latest Patents

Yukio Sugimoto holds a patent for a method for manufacturing silicon single crystals. This method involves melting silicon material in a furnace with an internal pressure between 60 and 400 mbar. The subsequent pulling of the single crystal occurs in a furnace with a lower internal pressure, not exceeding 95 mbar. This innovative approach effectively prevents the production of defective single crystals caused by pinholes, dislocations from bubbles and impurities, and issues arising from the evaporation of SiO.

Career Highlights

Sugimoto is associated with Sumitomo Metal Industries, Inc., where he has applied his expertise in materials science. His work has been instrumental in enhancing the quality and efficiency of silicon single crystal production, which is crucial for various electronic applications.

Collaborations

He has collaborated with notable colleagues, including Hiroshi Asano and Fusao Tabata, to further advance research and development in this field.

Conclusion

Yukio Sugimoto's contributions to the manufacturing of silicon single crystals represent a significant advancement in materials science. His innovative methods continue to influence the semiconductor industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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