The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Jun. 02, 2000
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A method for manufacturing a silicon single crystal. In this method, silicon material melting is performed in a furnace having an internal pressure between 60 and 400 mbar. The subsequent single crystal pulling is performed in a furnace having an internal pressure which is lower than the pressure when the silicon material is molten, but not exceeding 95 mbar. This method prevents production of a defective single crystal which results from the formation of pinholes, prevents dislocation of the single crystal which results from bubbles and impurities present in silicon melting solution, and prevents dislocation of the single crystal which results from evaporation of the SiO.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile