Tsukuba, Japan

Yukinori Morita

This inventor holds 1 USPTO granted patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukinori Morita. Retrieved from https://idiyas.com/inventor/yukinori-morita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yukinori Morita

Introduction

Yukinori Morita is a prominent inventor based in Tsukuba, Japan. He is known for his contributions to the field of semiconductor technology. His innovative work has led to the development of a unique two-terminal resistance switching element.

Latest Patents

Yukinori Morita holds a patent for a two-terminal resistance switching element with silicon, as well as a semiconductor device. This invention features two silicon films, each doped with an impurity, arranged with a gap width in the order of nanometers. The gap width ranges from 0.1 nm to 100 nm. This technology can be utilized in memory, storage devices, and other applications.

Career Highlights

Morita is affiliated with the National Institute of Advanced Industrial Science and Technology, where he continues to advance his research and development efforts. His work has significantly impacted the semiconductor industry, showcasing his expertise and innovative thinking.

Collaborations

Yukinori Morita has collaborated with notable colleagues, including Yasuhisa Naitoh and Masayo Horikawa. These partnerships have fostered a collaborative environment that enhances the potential for groundbreaking innovations.

Conclusion

Yukinori Morita's contributions to semiconductor technology exemplify the spirit of innovation. His patented inventions and collaborative efforts continue to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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