The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jun. 13, 2008
Applicants:
Yasuhisa Naitoh, Tsukuba, JP;
Yukinori Morita, Tsukuba, JP;
Masayo Horikawa, Tsukuba, JP;
Tetsuo Shimizu, Tsukuba, JP;
Inventors:
Yasuhisa Naitoh, Tsukuba, JP;
Yukinori Morita, Tsukuba, JP;
Masayo Horikawa, Tsukuba, JP;
Tetsuo Shimizu, Tsukuba, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.