Owariasahi, Japan

Yukinori Fujimura


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Innovations of Yukinori Fujimura

Introduction

Yukinori Fujimura is a notable inventor based in Owariasahi, Japan. He has made significant contributions to the field of semiconductor devices, showcasing his expertise through his innovative patents. His work has been recognized in the industry, particularly for its technical advancements.

Latest Patents

Fujimura holds a patent for a lateral type semiconductor device designed to eliminate the turning-on of parasitic MOS transistors. This semiconductor device features a substrate of a first conduction type, conductive regions of a second conduction type, and an intervening region of the first conduction type. The design includes multiple layers, such as insulator films and conductor layers, which work together to enhance the device's performance and reliability.

Career Highlights

Throughout his career, Yukinori Fujimura has worked with prominent companies, including Fujitsu Corporation and Fujitsu VLSI Limited. His experience in these organizations has allowed him to develop and refine his skills in semiconductor technology, contributing to various projects and innovations.

Collaborations

Fujimura has collaborated with notable colleagues, including Toshio Hanazawa and Takashi Matsumoto. These partnerships have fostered a creative environment that has led to advancements in their respective fields.

Conclusion

Yukinori Fujimura's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the industry. His work continues to influence the development of advanced electronic devices.

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