Saitama, Japan

Yuki Ueda

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Novel Crystal Technology, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuki Ueda. Retrieved from https://idiyas.com/inventor/yuki-ueda-878riuy0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuki Ueda and Gallium Oxide Crystal Growth

Introduction

Yuki Ueda is an inventor based in Saitama, Japan, associated with Novel Crystal Technology, Inc. Her patent work focuses on equipment for growing gallium oxide-based semiconductor crystals.

Latest Patents

Ueda is named on 1 patent, titled “Single Crystal Growth Apparatus.” The invention describes an apparatus for growing a gallium oxide-based semiconductor single crystal from a raw material melt. Its crucible has separate sections for holding a seed crystal and growing the crystal, while a tubular susceptor supports the crucible and surrounds the seed crystal section. A molybdenum disilicide heating element melts the raw material. The susceptor’s specially thickened portion is positioned close to and around at least part of the seed crystal section, helping shape the apparatus’s thermal environment during crystal growth.

Career Highlights

Ueda’s listed patent reflects work on specialized semiconductor manufacturing equipment. By addressing the crucible, susceptor, and heating arrangement, the invention targets the controlled growth of gallium oxide-based single crystals.

Collaborations

The patent information provided associates Ueda with Novel Crystal Technology, Inc. No additional collaborators are specified in the supplied details.

Conclusion

Yuki Ueda’s patent documents an apparatus designed to support gallium oxide-based single-crystal growth, connecting her inventive work with semiconductor materials and manufacturing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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