The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Oct. 25, 2022
Applicant:

Novel Crystal Technology, Inc., Saitama, JP;

Inventors:

Takuya Igarashi, Saitama, JP;

Yuki Ueda, Saitama, JP;

Kimiyoshi Koshi, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 29/16 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 11/002 (2013.01); C30B 11/003 (2013.01); C30B 29/16 (2013.01); C30B 35/002 (2013.01); Y10T 117/10 (2015.01);
Abstract

A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accommodated therein, a tubular susceptor surrounding the seed crystal section and also supporting the crucible from below, and a molybdenum disilicide heating element to melt a raw material in the growing crystal section to obtain the raw material melt. The susceptor includes a thick portion at a portion in a height direction that is thicker and has a shorter horizontal distance from the seed crystal section than other portions. The thick portion surrounds at least a portion of the seed crystal section in the height direction.


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