Yokohama, Japan

Yuki Ito

This inventor holds 1 USPTO granted patent. Top assignee: Kioxia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuki Ito. Retrieved from https://idiyas.com/inventor/yuki-ito-r24zayq0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuki Ito - Innovator in Non-Volatile Memory Technology

Introduction

Yuki Ito is a prominent inventor based in Yokohama, Kanagawa, Japan. She has made significant contributions to the field of non-volatile memory technology. With a focus on innovative solutions, Yuki has developed a unique approach to memory design that enhances performance and reliability.

Latest Patents

Yuki Ito holds a patent for a variable resistance non-volatile memory. This invention includes a memory cell with a core portion extending in a first direction above a semiconductor substrate. The design features a variable resistance layer, a semiconductor layer, an insulator layer, and a voltage application electrode. Notably, the impurity concentration of the semiconductor layer is non-uniform, which optimizes the memory's functionality. Yuki's patent is a testament to her expertise and innovative thinking in the field.

Career Highlights

Yuki is currently employed at Kioxia Corporation, where she continues to push the boundaries of memory technology. Her work at Kioxia has allowed her to collaborate with leading experts in the industry and contribute to groundbreaking advancements in non-volatile memory solutions.

Conclusion

Yuki Ito is a trailblazer in the realm of non-volatile memory technology. Her innovative patent and ongoing work at Kioxia Corporation highlight her commitment to advancing the field. Yuki's contributions are paving the way for future developments in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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