The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Mar. 01, 2023
Kioxia Corporation, Tokyo, JP;
Yuki Ito, Yokohama Kanagawa, JP;
Daisaburo Takashima, Yokohama Kanagawa, JP;
Hidehiro Shiga, Yokohama Kanagawa, JP;
Yoshiki Kamata, Tokyo, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A variable resistance non-volatile memory includes a memory cell including a core portion extending in a first direction above a semiconductor substrate, a variable resistance layer extending in a first direction and in contact with the core portion, a semiconductor layer extending in a first direction and in contact with the variable resistance layer, an insulator layer extending in a first direction and in contact with the semiconductor layer, and a first voltage application electrode extending in a second direction crossing the first direction and in contact with the insulator layer. An impurity concentration of the semiconductor layer is non-uniform, such that an impurity concentration of a first portion of the semiconductor layer in contact with the insulator layer is at least ten times higher than an impurity concentration of a second portion of the semiconductor layer in contact with the variable resistance layer.