Shanghai, China

Yujia Zhuang

This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Simgui Technology Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yujia Zhuang. Retrieved from https://idiyas.com/inventor/yujia-zhuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Yujia Zhuang: Innovator in Surface Oxidation Methods

Introduction

Yujia Zhuang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to wafer processing.

Latest Patents

Yujia Zhuang holds a patent for a surface oxidation method for a wafer. This method involves raising the temperature of the wafer in an oxidation atmosphere, starting from a specific temperature to a target temperature at a rate greater than 5°C/min. The process takes place in a vertical furnace tube of an annealing furnace, which includes a gas intake conduit designed for optimal gas flow. The wafer is isothermally oxidized at the target temperature within this controlled environment.

Career Highlights

Yujia Zhuang is currently employed at Shanghai Simgui Technology Co., Ltd. His work focuses on advancing technologies that enhance the efficiency and effectiveness of semiconductor manufacturing processes. His innovative approach has positioned him as a key player in the industry.

Collaborations

Yujia collaborates with talented professionals in his field, including Huijun Xu and Hao Wang. Their combined expertise contributes to the development of cutting-edge technologies in semiconductor processing.

Conclusion

Yujia Zhuang's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing industry standards. His work continues to influence the future of wafer processing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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