Shanghai Simgui Technology Co., Ltd.

Yujia Zhuang

Hao Wang

Xiangyu Li

Huijun Xu

A surface oxidation method for a wafer, the method comprises: raising a temperature on the wafer in an oxidation atmosphere, the temperature is raised from a start temperature to a target temperature at a temperature raising rate greater than 5&#xb0; C./min, the temperature is raised in a vertical furnace tube of an annealing furnace, the vertical furnace tube includes a gas intake conduit arranged on a side wall, the gas intake conduit includes a gas inlet arranged to be proximate to a bottom of the vertical furnace tube and a gas outlet arranged to be proximate to a top of the furnace tube, the wafer overlying the vertical furnace tube; and isothermally oxidizing the wafer at the target temperature in the oxidation atmosphere.

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Shanghai, China

Yujia Zhuang