The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Oct. 31, 2019
Applicant:

Shanghai Simgui Technology Co., Ltd., Shanghai, CN;

Inventors:

Huijun Xu, Shanghai, CN;

Yujia Zhuang, Shanghai, CN;

Hao Wang, Shanghai, CN;

Xiangyu Li, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); H01L 21/0201 (2013.01); H01L 21/02337 (2013.01);
Abstract

A surface oxidation method for a wafer, the method comprises: raising a temperature on the wafer in an oxidation atmosphere, the temperature is raised from a start temperature to a target temperature at a temperature raising rate greater than 5° C./min, the temperature is raised in a vertical furnace tube of an annealing furnace, the vertical furnace tube includes a gas intake conduit arranged on a side wall, the gas intake conduit includes a gas inlet arranged to be proximate to a bottom of the vertical furnace tube and a gas outlet arranged to be proximate to a top of the furnace tube, the wafer overlying the vertical furnace tube; and isothermally oxidizing the wafer at the target temperature in the oxidation atmosphere.


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