Yuhang Yang

Title: Yuhang Yang and His Storage Array Patent.

Introduction

Yuhang Yang is an inventor associated with Peking University in Beijing, China. His patent work includes a storage-array design intended to increase memory density while reducing the drive-capability demands placed on field-effect transistors.

Latest Patents

Yang is credited with 1 patent, titled “Storage array.” The disclosure describes memory cells arranged in a matrix, with each cell containing two memories, one P-channel field-effect transistor, and two N-channel field-effect transistors. The transistors are connected in an alternating arrangement, and the two memories connect to the sources of the P-channel and N-channel transistors, respectively. The design aims to improve storage-array density and reduce the required drive capability of the field-effect transistors.

Career Highlights

Yang’s identified patent reflects work on memory-cell architecture and transistor arrangements. The available information associates him with Peking University but does not provide further details about his role or career history.

Collaborations

Zongwei Wang and Yimao Cai are identified as Yang’s coworkers. The provided information does not specify their roles in the storage-array patent.

Conclusion

Yuhang Yang’s “Storage array” patent presents a memory-cell design intended to increase array density and ease transistor drive requirements, highlighting his documented contribution to memory technology.