The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 24, 2023
Peking University, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The present disclosure provides a storage array including memory cells arranged in a matrix array, each memory cell includes two memories, one P-channel field effect transistor and two N-channel field effect transistors alternately connected to the P-channel field effect transistor; a source of the P-channel field effect transistor is connected to a drain of a N-channel field effect transistor, a drain of the P-channel field effect transistor is connected to a source of the N-channel field effect transistor, and the two memories are respectively connected to the source of the P-channel field effect transistor and the source of the N-channel field effect transistor. The present disclosure can improve the density of the storage array and reduce the requirement for the drive capability of the field effect transistor.