Taipei, Taiwan

Yueh-Hsun Lee

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2004

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations by Yueh-Hsun Lee in the Field of MOSFET Technology

Introduction

Yueh-Hsun Lee, an accomplished inventor based in Taipei, Taiwan, has made significant contributions to the field of semiconductor technology. With a focus on efficiency and precision in MOSFET measurement, Lee's innovative approach is evident in her patented method, which enhances the capacitance-voltage (C-V) technique for measuring effective channel lengths in metal-oxide-semiconductor field-effect transistors.

Latest Patents

Yueh-Hsun Lee holds a patent for a "Method for measuring an effective channel length of a MOSFET." This inventive approach introduces three compensation factors designed to improve the accuracy of the C-V method. The first factor is derived from two unit length gate capacitances, the second from two unit length overlap capacitances, and the third is the ratio of the second factor to the first. By employing these calculations, Lee's method provides more reliable measurements of both the effective channel length and the overlap lengths of gates with sources and drains in MOSFETs.

Career Highlights

Lee is currently associated with United Microelectronics Corporation, a prominent player in the semiconductor industry. Her work within the company underscores her dedication to advancing technological capabilities in manufacturing and electronics design. Lee’s innovative contributions are expected to enhance product performance and reliability.

Collaborations

Throughout her career, Yueh-Hsun Lee has collaborated with notable colleagues in the industry, including Heng-Sheng Huang and Gary Y Hong. These partnerships reflect a strong commitment to teamwork and collective innovation, which is crucial in the fast-paced tech environment.

Conclusion

Yueh-Hsun Lee stands out as a dedicated inventor whose work significantly impacts the semiconductor field, particularly in MOSFET technology. Her patented methods not only underscore her ingenuity but also represent a crucial advancement in improving the measurement techniques of transistors. As she continues to innovate within United Microelectronics Corporation, her contributions will likely pave the way for future advancements in this critical area of technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…