Company Filing History:
Years Active: 2019
Title: Yucheng Wang: Innovator in HEMT Device Manufacturing
Introduction
Yucheng Wang is a notable inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of high electron mobility transistors (HEMT) and hybrid high mobility transistors (HHMT).
Latest Patents
Yucheng Wang holds a patent for a method of manufacturing a HEMT/HHMT device based on CHNHPbI material. This innovative method includes several steps: selecting an AlO substrate, manufacturing a source electrode and a drain electrode, forming a first electron transport layer on the surfaces of the source electrode, drain electrode, and the AlO substrate not covered by these electrodes, and manufacturing CHNHPbI material on the surface of the first electron transport layer to create a first light-absorbing layer. Finally, a gate electrode is formed on the surface of the first light-absorbing layer to complete the manufacture of the HEMT device.
Career Highlights
Yucheng Wang is affiliated with Xidian University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Yucheng Wang collaborates with esteemed colleagues, including Renxu Jia and Lei Yuan, who contribute to his research endeavors.
Conclusion
Yucheng Wang's innovative approach to HEMT device manufacturing showcases his expertise and commitment to advancing technology in the semiconductor field. His contributions are paving the way for future developments in electronic devices.