Xidian University

Yucheng Wang

Yuming Zhang

Lei Yuan

Renxu Jia

Tiqiang Pang

A method for manufacturing a HEMT/HHMT device based on CHNHPbImaterial are provided. The method includes: selecting an AlOsubstrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the AlOsubstrate not covered by the source electrode and the drain electrode; manufacturing CHNHPbImaterial on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

Growing community of inventors

Xi'an, China

Yucheng Wang