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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10332691 B1

PDFFull Text
Date of Patent:
Jun. 25, 2019

Filed:

Sep. 01, 2018

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Applicant:

Xidian University, Xi'an, CN;

Inventors:

Renxu Jia, Xi'an, TW;

Lei Yuan, Xi'an, CN;

Yucheng Wang, Xi'an, CN;

Tiqiang Pang, Xi'an, CN;

Yuming Zhang, Xi'an, CN;

Assignee:

XIDIAN UNIVERSITY, Xi'an, CN;

Attorney:

WPAT, PC

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01L 27/30 (2006.01); H01L 51/44 (2006.01); H01L 51/42 (2006.01); H01G 9/00 (2006.01); C23C 14/18 (2006.01); C23C 14/04 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2072 (2013.01); H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H01G 9/2018 (2013.01); H01L 27/302 (2013.01); H01L 51/0003 (2013.01); H01L 51/005 (2013.01); H01L 51/0021 (2013.01); H01L 51/0026 (2013.01); H01L 51/428 (2013.01); H01L 51/4226 (2013.01); H01L 51/441 (2013.01); C23C 14/042 (2013.01); C23C 14/18 (2013.01); H01L 51/006 (2013.01); H01L 51/0047 (2013.01); H01L 51/0056 (2013.01); H01L 51/0077 (2013.01); H01L 51/0541 (2013.01); H01L 2251/303 (2013.01); Y02E 10/549 (2013.01);
Abstract

A method for manufacturing a HEMT/HHMT device based on CHNHPbImaterial are provided. The method includes: selecting an AlOsubstrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the AlOsubstrate not covered by the source electrode and the drain electrode; manufacturing CHNHPbImaterial on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

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