This inventor holds 1 USPTO granted patent. Top assignee: Xidian University. Active years: 2019.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2019
Title: Tiqiang Pang: Innovator in HEMT Device Manufacturing
Introduction
Tiqiang Pang is a notable inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of HEMT (High Electron Mobility Transistor) devices. His innovative approach has led to the development of a unique method that enhances the efficiency and performance of these devices.
Latest Patents
Tiqiang Pang holds 1 patent for his invention titled "A method for manufacturing a HEMT/HHMT device based on CHNHPbI material." This method involves several key steps, including selecting an AlO substrate, manufacturing source and drain electrodes, and forming a first electron transport layer. The process culminates in the creation of a gate electrode, completing the manufacture of the HEMT device.
Career Highlights
Pang is affiliated with Xidian University, where he continues to engage in research and development in the field of semiconductor devices. His work has garnered attention for its potential applications in various electronic systems, contributing to advancements in technology.
Collaborations
Tiqiang Pang collaborates with esteemed colleagues, including Renxu Jia and Lei Yuan. Their combined expertise fosters an environment of innovation and progress in their research endeavors.
Conclusion
Tiqiang Pang's contributions to the field of HEMT device manufacturing exemplify the spirit of innovation. His patented method showcases the potential for advancements in semiconductor technology, paving the way for future developments.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile