Yuanmin Du

Title: Yuanmin Du and Resistive Memory Innovation.

Introduction

Yuanmin Du is an inventor associated with Nanyang Technological University in Singapore. His patent work concerns resistive non-volatile memory, a technology designed to retain information without continuous power.

Latest Patents

Du is associated with 1 patent: “Non-volatile memory device having primary memory layer with oxygen gradient.” The invention describes an electrically actuated resistive memory device with first and second electrodes, a buffer layer, and a primary memory layer made up of three active layers. An oxygen gradient across the primary memory layer is intended to support lower power consumption and more stable resistive switching. The patent also describes methods for fabricating and operating the device.

Career Highlights

Du’s listed patent highlights research into memory-device design and resistive switching. His work is associated with Nanyang Technological University, a Singapore-based research institution.

Collaborations

The patent’s listed collaborators include Wen Siang Lew and Putu Andhita Dananjaya.

Conclusion

Yuanmin Du’s patent presents an oxygen-gradient approach to resistive non-volatile memory, with the stated goals of improving switching stability and reducing power consumption.