The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jun. 08, 2022
Applicant:

Nanyang Technological University, Singapore, SG;

Inventors:

Yuanmin Du, Singapore, SG;

Wen Siang Lew, Singapore, SG;

Putu Andhita Dananjaya, Singapore, SG;

Siew Wei Hoo, Singapore, SG;

Weng Hong Lai, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10B 63/20 (2023.02); H10P 14/3434 (2026.01);
Abstract

Provided is an electrically actuated resistive non-volatile memory. The resistive memory device comprises a first electrode, a second electrode, a buffer layer, and a primary memory layer. The primary memory layer comprises a first active layer, a second active layer, and a third active layer, wherein an oxygen gradient is configured across the primary memory layer. Methods of fabricating and operating such a memory device are also provided. The memory device advantageously provides for lower power consumption and more stable resistive switching.


Find Patent Forward Citations

Du, Yuanmin. (2026). Non-volatile memory device having primary memory layer with oxygen gradient (U.S. Patent No. 12757411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757411

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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