Company Filing History:
Years Active: 2016
Title: Innovations of Yuancheng Yang
Introduction
Yuancheng Yang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor designs. With a total of three patents to his name, Yang's work is at the forefront of innovation in integrated circuits.
Latest Patents
One of Yuancheng Yang's latest patents is the "Integration method for a vertical nanowire transistor." This invention discloses a method for integrating a vertical nanowire transistor, which belongs to the field of field effect transistor logic devices in CMOS ultra-large scale integrated circuits (ULSI). The method combines selective epitaxy and replacement gate on the sidewall, allowing for accurate control over the size and shape of the device channel. This innovation improves device performance by avoiding etching damage and enhancing consistency in device characteristics.
Another notable patent is the "Method for fabricating multiple layers of ultra narrow silicon wires." This method involves fabricating wet-etch masking layers of silicon and forming a Fin and source/drain regions through epitaxy. The advantages of this invention include precise positioning of ultra narrow silicon wires, uniform cross-section shapes, and compatibility with existing planar transistor technologies. The process is cost-effective and safe, making it suitable for integrated circuit manufacturing.
Career Highlights
Yuancheng Yang is affiliated with Peking University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approaches to traditional fabrication methods, pushing the boundaries of what is possible in the field.
Collaborations
Yang collaborates with esteemed colleagues, including Jiewen Fan and Ru Huang. Their combined expertise contributes to the success of their research initiatives and patent developments.
Conclusion
Yuancheng Yang's contributions to the field of semiconductor technology through his innovative patents demonstrate his commitment to advancing the industry. His work not only enhances device performance but also paves the way for future developments in integrated circuits.