This inventor holds 1 USPTO granted patent. Top assignee: Micron Technology Incorporated. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: **Yuan Hsuan Jhang: Innovator in Memory Device Technology**
Introduction
Yuan Hsuan Jhang, a noted inventor based in Tokyo, Japan, has made significant contributions to the field of memory devices. With a focus on enhancing the operational efficiency of these devices, his work has important implications for the future of data processing technologies. His innovative patent demonstrates how clever engineering can enable improved performance in computing systems.
Latest Patents
Yuan Hsuan Jhang holds a patent titled "Apparatuses and methods for providing internal double data rate operation from external single data rate signals." This invention reveals the design of a memory device that utilizes an internal synchronization circuit to facilitate double data rate operations when presented with external single data rate signals. This technology enables the memory device to latch external signals at both the rising and falling edges of its clock signal, maximizing data throughput and efficiency in memory operations.
Career Highlights
Currently, Yuan is employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His tenure at Micron has been marked by a commitment to advancing memory technology and enhancing its applications across various sectors. His expertise in synchronization circuits serves as a cornerstone for innovative solutions in memory performance.
Collaborations
Throughout his career, Yuan has collaborated with esteemed coworkers such as Toru Ishikawa and Takuya Nakanishi. These partnerships not only enrich the development process but also foster an environment of creativity and innovation within the company.
Conclusion
Yuan Hsuan Jhang exemplifies the spirit of innovation in the realm of memory devices. His contributions, particularly the patented technology for double data rate operations, represent a significant advancement that holds promise for the future of computing. With ongoing collaborations and a robust professional background, Yuan continues to influence the landscape of memory technology in meaningful ways.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile