This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yu Yeon Kim and His Semiconductor Memory Patent.
Introduction
Yu Yeon Kim is an inventor associated with Suwon, South Korea, and Samsung Electronics Ltd. His patent work concerns semiconductor memory technology. The supplied information lists 1 patent.
Latest Patents
Kim’s listed patent is “Nonvolatile Memory Device with MILC Channel.” It describes a memory device with alternating gate electrodes and insulating patterns, an information storage film along a trench sidewall, and a semiconductor pattern made of polycrystalline silicon. The patent specifies metal silicide at the grain boundary between two monocrystalline silicon regions, but not within those regions.
Career Highlights
The available information connects Kim’s invention to Samsung Electronics Ltd. and highlights his work on the structure of a nonvolatile memory device.
Collaborations
The supplied data names Si Yeong Yang and Chae Ho Kim as Kim’s coworkers. It does not specify their roles in the patent or the nature of their collaboration.
Conclusion
Yu Yeon Kim’s listed patent reflects work on semiconductor memory design, particularly the arrangement of silicon and metal silicide in a MILC channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile