Nonvolatile memory device with milc channel

Abstract

A volatile memory device and a nonvolatile memory device are provided. Provided is a plurality of gate electrodes and a plurality of insulating patterns alternately stacked on top of each other in a first direction, an information storage film formed along a sidewall of a trench, wherein the trench extends through the plurality of gate electrodes and the insulating patterns in the first direction, and a semiconductor pattern formed on the information storage film, wherein the semiconductor pattern is made of polycrystalline silicon composed of a first monocrystalline silicon and a second monocrystalline silicon, wherein a metal silicide is present in a grain boundary between the first monocrystalline silicon and the second monocrystalline silicon, wherein the metal silicide is absent in each of the first monocrystalline silicon and the second monocrystalline silicon except for the grain boundary therebetween.