This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017-2026
Title: Chae Ho Kim and a Nonvolatile Memory Device with an MILC Channel.
Introduction
Chae Ho Kim is an inventor associated with Samsung Electronics Ltd. in Suwon-si, South Korea. The supplied information credits Kim with 1 patent concerning memory-device technology.
Latest Patents
Kim’s listed patent, “Nonvolatile Memory Device with MILC Channel,” describes a memory structure with alternating gate electrodes and insulating patterns. An information-storage film lines a trench that passes through these layers, and a semiconductor pattern is formed over the film. The semiconductor pattern consists of monocrystalline silicon regions, with metal silicide located at the grain boundary between them and absent from the interiors of those regions. The description also refers to volatile and nonvolatile memory devices.
Career Highlights
The available information identifies Kim’s work at Samsung Electronics Ltd. and highlights the patent’s focus on a metal-induced lateral crystallization (MILC) channel structure for memory devices.
Collaborations
The supplied data names Si Yeong Yang and Kwang Min Park as Kim’s coworkers. It does not specify their roles or describe particular joint patent work.
Conclusion
Chae Ho Kim’s listed patent reflects work on semiconductor structures for memory devices, including a channel design that places metal silicide at silicon grain boundaries.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile