Si Yeong Yang

Title: Si Yeong Yang: Inventor in Semiconductor Memory Technology

Introduction

Si Yeong Yang is an inventor based in Suwon, South Korea, associated with Samsung Electronics. His patent work concerns semiconductor memory devices and the structure of their channels.

Latest Patents

Yang is named on 1 patent: “Nonvolatile Memory Device with MILC Channel.” The patent describes memory devices with stacked gate electrodes and insulating patterns, an information storage film along a trench sidewall, and a semiconductor channel made of polycrystalline silicon. It specifies metal silicide at the grain boundary between two monocrystalline silicon regions, while excluding silicide from the regions themselves.

Career Highlights

Yang’s listed invention reflects work on the design and materials of nonvolatile memory devices. The available information associates him with Samsung Electronics but does not provide further details about his role or career history.

Collaborations

Yu Yeon Kim and Chae Ho Kim are identified as Yang’s coworkers. The provided information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Si Yeong Yang’s documented patent activity centers on a nonvolatile memory device with a metal-induced lateral crystallization channel, highlighting a specific contribution to semiconductor memory technology.