Kaohsiung, Taiwan

Yu-Wen Chu

This inventor holds 1 USPTO granted patent. Top assignee: Promos Technologies, Inc. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Wen Chu. Retrieved from https://idiyas.com/inventor/yu-wen-chu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 78(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Yu-Wen Chu: Innovator in Oxide Layer Technology

Introduction

Yu-Wen Chu is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of oxide layers for vertical transistors. His innovative approach has garnered attention in the industry.

Latest Patents

Yu-Wen Chu holds a patent for an "Anisotropic formation process of oxide layers for vertical transistors." This method involves forming a thin oxide layer on the circumferential wall of a recess in a trench while simultaneously creating a thick oxide layer on the bottom surface of the recess. The thick oxide layer serves as the trench top oxide, and the thin oxide layer functions as the gate oxide. This dual-layer approach enhances the performance and efficiency of vertical transistors.

Career Highlights

Yu-Wen Chu is currently employed at Promos Technologies, Inc., where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Yu-Wen Chu collaborates with his coworker, Yu-Ping Chu, who is also involved in the field of semiconductor technology. Their combined expertise contributes to the ongoing research and development efforts at Promos Technologies, Inc.

Conclusion

Yu-Wen Chu's contributions to the field of oxide layer technology for vertical transistors highlight his innovative spirit and dedication to advancing semiconductor technology. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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