Wanluan, Taiwan

Yu-Ting Chen

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Ting Chen. Retrieved from https://idiyas.com/inventor/yu-ting-chen-5g8h9g6j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations by Yu-Ting Chen

Introduction

Yu-Ting Chen is an innovative inventor based in Wanluan Township, Taiwan. She has made significant contributions to the field of semiconductor devices, focusing on methods of manufacturing that enhance the performance of image sensors. Her work aims to address critical challenges in the industry, particularly in reducing electrical cross-talk and improving image quality.

Latest Patent Applications

Yu-Ting Chen's notable patent application is titled "SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING." This application describes techniques for forming a biased backside deep trench isolation and grid structure for a backside illumination image sensor. The methods include creating an array of backside deep trench isolation structures and a biasing-pad that connects electrically to these structures through the grid structure. These innovations are designed to minimize electrical cross-talk and oblique light cross-talk between photodiodes, ultimately improving the performance of backside illumination image sensors. The enhancements may lead to a suppression of dark current, a reduction in the number of white pixels, and decreased cross-talk within the sensor.

Conclusion

Yu-Ting Chen's work in semiconductor device manufacturing showcases her commitment to advancing technology in image sensors. Her innovative approaches have the potential to significantly improve sensor performance and address existing challenges in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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