Company Filing History:
Years Active: 2002
Title: Innovations of Yu-Shyan Lin in Heterostructure Field-Effect Transistors
Introduction
Yu-Shyan Lin is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of heterostructure field-effect transistors (HFETs). His innovative work has led to advancements that enhance the performance of electronic devices.
Latest Patents
Yu-Shyan Lin holds a patent for the invention titled "In0.34A10.66AsSb0.15/InP HFET utilizing InP channels." This patent describes a double δ-doped InAlAsSb/InP heterostructure field-effect transistor that has been successfully grown by metalorganic chemical vapor deposition for the first time. The invention boasts enhanced electron mobilities without sacrificing carrier densities. It achieves a turn-on voltage as high as 1 V, along with an extremely low gate reverse leakage current of 111 µA/mm at V = -40V. The three-terminal on-and off-state breakdown voltages reach as high as 40.8V and 16.1V, respectively. The output conductance is remarkably low at 1.8 mS/mm, even when the drain-to-source voltage is 15V. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, and InAlAsSb Schottky layer, as well as the large conduction-band discontinuity (ΔEc) at the InAlAsSb/InP heterojunction.
Career Highlights
Yu-Shyan Lin is affiliated with the National Science Council, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in various electronic devices, making him a key figure in the field.
Collaborations
Yu-Shyan Lin has collaborated with notable colleagues, including Wei-Chou Hsu and Chia-Yen Yeh. Their joint efforts have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
In summary, Yu-Shyan Lin's contributions to the field of heterostructure field-effect transistors have paved the way for significant advancements in semiconductor technology. His innovative patent and collaborations highlight his role as a leading inventor in this domain.