National Science Council

Yu-Shyan Lin

Wei-Chou Hsu

Chia-Yen Yeh

A double &dgr;-doped In Al As Sb /InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at V &equals;&minus;40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V,respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The g is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In Al As Sb Schottky layer'and to the large conduction-band discontinuity(&Dgr;Ec) at the InAlAsSb/InP heterojunction.

Growing community of inventors

Tainan, Taiwan

Yu-Shyan Lin