The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
May. 22, 2001
National Science Council, Taipei, US;
Abstract
A double &dgr;-doped In Al As Sb /InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at V =−40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V,respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The g is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In Al As Sb Schottky layer'and to the large conduction-band discontinuity(&Dgr;Ec) at the InAlAsSb/InP heterojunction.