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For the Inventor, By the Inventor

Zhubei, Taiwan

Yu-Shine Lin

This inventor holds 7 USPTO granted patents and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Shine Lin. Retrieved from https://idiyas.com/inventor/yu-shine-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 85.7

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Hsinchu County, TW (2016)
  • Zhubei, TW (2019 - 2023)
  • Hsinchu, TW (2023)

Company Filing History:

goldMedal7 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2023

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7 patents (USPTO):Explore Patents
1. 11855199 - High Electron Mobility Transistor (HEMT) with a back barrier layer (2023-12-26),
2. 11843042 - Structures and methods for controlling dopant diffusion and activation (2023-12-12),
3. 11121230 - Structures and methods for controlling dopant diffusion and activation (2021-09-14),
4. 10739682 - Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED) (2020-08-11),
5. 10509323 - Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED) (2019-12-17),
6. 10295909 - Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED) (2019-05-21),
7. 9331081 - Semiconductor structure and manufacturing method thereof (2016-05-03),

Title: Yu-Shine Lin: Innovator in Semiconductor Technology

Introduction

Yu-Shine Lin is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Yu-Shine Lin's latest patents is for a High Electron Mobility Transistor (HEMT) with a back barrier layer. This invention discloses a semiconductor device and a method for fabricating it, specifically designed to block electron leakage and improve threshold voltage. The device includes a Gallium Nitride (GaN) layer, a front barrier layer, and a back barrier layer made of Aluminum Nitride (AlN). Another notable patent involves structures and methods for controlling dopant diffusion and activation. This semiconductor structure features a channel layer, a barrier layer, and a doped layer that optimizes the doping concentration for enhanced performance.

Career Highlights

Yu-Shine Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technologies.

Collaborations

Yu-Shine Lin collaborates with talented coworkers, including Ching-Yu Chen and Jiang-He Xie, who contribute to his research and development efforts.

Conclusion

Yu-Shine Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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