Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Shine Lin

Chia-Chi Chung

Ying-Hao Wang

Ching-Yu Chen

Jiang-He Xie

Yu-Xiang Lin

Yu-Hen Wu

Han-Chih Chung

Han Wen Hsu

Wei-Ting Chang

Tsung-Lin Lee

Chiu-Hua Chung

Chia-Ling Yeh

Chun-Ming Lin

Bor-Wen Lai

Pravanshu Mohanta

Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

High Electron Mobility Transistor (HEMT) with a back barrier layer

Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Structures and methods for controlling dopant diffusion and activation

Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED)

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask with the second mask; defining a second doped region through an opening of the second mask; and stripping the first mask and the second mask from the substrate. The present disclosure provides a semiconductor structure, including a substrate having a top surface; a first doped region having a first surface; and a second doped region having a second surface. The first surface and the second surface are coplanar with the top surface of the substrate. Either of the doped regions has a monotonically decreasing doping profile from the top surface of the substrate to a bottom of the doped region.

Semiconductor structure and manufacturing method thereof

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Zhubei, Taiwan

Yu-Shine Lin