This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Renesas Electronics Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yu Nagahama: Innovator in Semiconductor Manufacturing
Introduction: Yu Nagahama is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach has led to the development of a unique method that enhances the efficiency and effectiveness of semiconductor devices.
Latest Patents: Yu Nagahama holds 1 patent for his invention titled "Method of manufacturing semiconductor device." This patent describes a process where a trench is formed in a semiconductor substrate. A first silicon oxide film is created inside the trench, followed by the formation of a poly-crystalline silicon film on this oxide film. A second silicon oxide film is then produced from the poly-crystalline silicon film through a thermal oxidation treatment. This process results in an insulating film that includes both the first and second silicon oxide films. Finally, a first conductive film is embedded inside the trench via the insulating film.
Career Highlights: Yu Nagahama is currently associated with Renesas Electronics Corporation, a leading company in the semiconductor industry. His work at Renesas has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor technology.
Conclusion: Yu Nagahama's contributions to semiconductor manufacturing exemplify the impact of innovation in technology. His patented method showcases his expertise and commitment to enhancing the efficiency of semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile