Taichung, Taiwan

Yu-Lung Wang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Winbond Electronics Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Lung Wang. Retrieved from https://idiyas.com/inventor/yu-lung-wang-q4r87rrp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yu-Lung Wang and Memory Device Manufacturing

Introduction

Yu-Lung Wang is an inventor based in Taichung, Taiwan. His patent work includes a method for manufacturing a memory device, and he is associated with Winbond Electronics Corporation.

Latest Patents

Wang is listed as an inventor on 1 patent: “Method of Manufacturing Memory Device.” The invention describes forming a stack layer and a hard mask layer on a substrate, with a protrusion in the hard mask. A patterned mandrel is then formed with components positioned beside and on top of the protrusion, as well as a third mandrel. Using this pattern as a mask, the hard mask and stack layer are patterned to create a dummy structure and a word line structure on the substrate.

Career Highlights

Wang’s documented patent contribution concerns memory-device fabrication. The method distinguishes the portions of the stack layer used to form the dummy structure from the portion used to form the word line structure.

Collaborations

Wang is associated with Winbond Electronics Corporation, a company working in the semiconductor industry. The available information identifies this company connection but does not specify particular co-inventors or collaborative projects.

Conclusion

Yu-Lung Wang’s patent describes a patterned-mandrel approach to forming structures used in memory-device manufacturing, reflecting his documented contribution to semiconductor innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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