This inventor holds 1 USPTO granted patent. Top assignee: Tsinghua University. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yu-Lun Yang: Semiconductor Device Innovation.
Introduction
Yu-Lun Yang is an inventor associated with Hsinchu City, Taiwan, and Tsinghua University. His patent work focuses on semiconductor device fabrication and the formation of van der Waals contacts.
Latest Patents
Yang is associated with 1 patent, titled “Semiconductor Device and Manufacturing Method Thereof.” The invention describes a method for forming a van der Waals structure between a metal and a semiconductor. It involves depositing and patterning a protective layer on a two-dimensional semiconductor layer, forming two electrodes on the protective layer, and then removing the protective layer completely. This process creates van der Waals contact structures between each electrode and the semiconductor layer.
Career Highlights
Yang’s patent highlights an approach to semiconductor manufacturing that uses a temporary protective layer to help form electrode contacts with a two-dimensional semiconductor. His work is associated with Tsinghua University.
Collaborations
Yang’s coworker PO-Wen Chiu is identified as a woman. The available information does not specify further details about their collaboration.
Conclusion
Yu-Lun Yang’s patent presents a semiconductor fabrication method for creating van der Waals contacts, reflecting his contribution to research associated with Tsinghua University.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile