Yu-Long Chang

Title: Yu-Long Chang: Innovator in Semiconductor Technology

Introduction

Yu-Long Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative solutions that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Yu-Long Chang's latest patents is for a lateral double-diffused metal oxide semiconductor (LDMOS). This invention provides a novel design where the pre-metal dielectric layer (PMD) is composed of a silicon-rich content material. Additionally, the inter-layer dielectric layer (ILD), inter-metal dielectric layer (IMD), or protective layer of the LDMOS may also be formed from a silicon-rich content material, which improves the overall functionality of the device. Another significant patent involves a compound and derivative of gabapentin, represented by a specific formula. This invention aims to enhance the therapeutic applications of gabapentin.

Career Highlights

Throughout his career, Yu-Long Chang has worked with notable organizations such as the Industrial Technology Research Institute and Vanguard International Semiconductor Corporation. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Yu-Long Chang has collaborated with esteemed colleagues, including Jenn-Tsang Hwang and Chung-Niang Yao. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Yu-Long Chang is a distinguished inventor whose work in semiconductor technology has led to valuable innovations. His patents reflect his commitment to enhancing the efficiency and effectiveness of semiconductor devices.