The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 30, 2009
Applicants:
Kwang-ming Lin, Hsinchu, TW;
Ming-cheng Lin, Taipei, TW;
Yu-long Chang, Hsinchu, TW;
Inventors:
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 21/76834 (2013.01); H01L 23/3171 (2013.01); H01L 29/66659 (2013.01); H01L 29/1083 (2013.01); H01L 29/42368 (2013.01); H01L 29/456 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The invention provides a lateral double-diffused metal oxide semiconductor (LDMOS). The pre-metal dielectric layer (PMD) of the LDMOS is a silicon rich content material. Additionally, the inter-layer dielectric layer (ILD), inter-metal dielectric layer (IMD), or protective layer of the LDMOS may be formed of a silicon rich content material.