Yu-Jin Pyo

Title: Yu-Jin Pyo and Semiconductor Device Innovation.

Introduction

Yu-Jin Pyo is an inventor associated with Seoul, South Korea, and Samsung Electronics Co., Ltd. Her patent work concerns semiconductor device manufacturing, particularly fin field-effect transistors.

Latest Patents

Pyo is named on 1 patent: “Methods of Selectively Growing Source/Drain Regions of Fin Field Effect Transistor and Method of Manufacturing Semiconductor Device Including a Fin Field Effect Transistor.” The disclosed methods include patterning a substrate to form an active pattern, creating a gate pattern that intersects it, and placing a gate spacer along the gate pattern’s sidewall. A growth-inhibiting layer covers an upper region of the gate pattern, while source/drain electrodes are formed on opposite sides.

Career Highlights

Pyo’s listed patent reflects work on methods for manufacturing semiconductor devices and selectively forming source/drain regions in fin field-effect transistors. The available information identifies her as affiliated with Samsung Electronics Co., Ltd.

Collaborations

The patent’s listed coworkers include Seong Hoon Jeong and Seokhoon Kim. Their names indicate collaborators associated with the disclosed invention.

Conclusion

Yu-Jin Pyo’s patent work at Samsung Electronics focuses on semiconductor manufacturing methods for fin field-effect transistors, including the selective formation of source/drain regions.