Hwaseong, South Korea

Yu-Jin Jeoung

This inventor holds 1 USPTO granted patent. Top assignees: Dongjin Semichem Co., Ltd., Samsung Electronics Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Jin Jeoung. Retrieved from https://idiyas.com/inventor/yu-jin-jeoung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Yu-Jin Jeoung: Innovator in Photoresist Technology

Introduction

Yu-Jin Jeoung is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of photoresist technology, particularly in methods of forming patterns for semiconductor manufacturing.

Latest Patents

Yu-Jin Jeoung holds a patent titled "Methods of forming patterns using compositions for an underlayer of photoresist." This innovative method involves preparing a composition that includes a solvent and a polymer with specific isocyanurate units. The process includes applying the composition on a substrate to create an underlayer, followed by the formation of a photoresist layer. The photoresist layer is then etched to create a pattern, which is used for patterning the substrate.

Career Highlights

Throughout his career, Yu-Jin Jeoung has worked with prominent companies in the technology sector. He has been associated with Samsung Electronics Co., Ltd. and Dongjin Semichem Co., Ltd., where he has contributed to advancements in semiconductor technologies.

Collaborations

Yu-Jin Jeoung has collaborated with several professionals in his field, including Jin-A Ryu and Jung-Youl Lee, enhancing the innovation process through teamwork and shared expertise.

Conclusion

Yu-Jin Jeoung's work in photoresist technology exemplifies the importance of innovation in the semiconductor industry. His contributions continue to influence advancements in manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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