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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10712662 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Jan. 13, 2017

Methods of forming patterns using compositions for an underlayer of photoresist

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Dongjin Semichem Co., Ltd., Seoul, KR;

Inventors:

Jin-A Ryu, Hwaseong-si, KR;

Jung-Youl Lee, Hwaseong-si, KR;

Kyung-Lyul Moon, Seoul, KR;

Yool Kang, Yongin-si, KR;

Hyun-Jin Kim, Hwaseong-si, KR;

Yu-Jin Jeoung, Hwaseong-si, KR;

Man-Ho Han, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

DONGJIN SEMICHEM CO., LTD., Mapo-gu, Seoul, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Daborah Chacko-Davis

Int. Cl.
CPC ...
C08G 18/02 (2006.01); G03F 7/11 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 49/02 (2006.01); C09D 175/00 (2006.01); G03F 7/004 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 18/022 (2013.01); C09D 175/00 (2013.01); G03F 7/0045 (2013.01); G03F 7/091 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/0276 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 28/00 (2013.01); G03F 7/094 (2013.01);
Abstract

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

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