This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2012-2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012-2014
Title: Innovations of Yu Hwan Ro
Introduction
Yu Hwan Ro is a notable inventor based in Seongnam, South Korea. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of memory technology.
Latest Patents
Yu Hwan Ro's latest patents include a voltage control method designed to minimize coupling noise between adjacent global bit lines during read-while operations. This innovative memory device features a plurality of global bit lines, a discharge line, and a switching circuit that connects the global bit lines to the discharge line in response to a discharge enable signal. Additionally, he has developed a nonvolatile memory device that includes global and local selection lines, along with selection circuits that optimize the selection process for these lines.
Career Highlights
Yu Hwan Ro is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory device technology, contributing to advancements that benefit a wide range of applications.
Collaborations
He has collaborated with notable coworkers, including Byunggil Choi and Yong-jun Lee, to further enhance the innovations in memory technology.
Conclusion
Yu Hwan Ro's contributions to memory device technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a significant inventor in the field. His innovations continue to influence advancements in memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile