Yu-Hsiao Lin

Title: Yu-Hsiao Lin: Innovator in Semiconductor Technology

Yu-Hsiao Lin is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work is recognized for its impact on the manufacturing processes of semiconductor structures.

Latest Patents

Yu-Hsiao Lin holds a patent for a semiconductor structure having a through substrate via and its manufacturing method. This patent describes a semiconductor structure that includes a dielectric layer, a conductive pad embedded in the dielectric layer, and a semiconductor substrate. The substrate features a via opening with a notch near the dielectric layer. A through substrate via (TSV) is positioned within the via opening and extends into the dielectric layer to connect with the conductive pad. Additionally, a dielectric liner is included in the via opening to separate the TSV from the semiconductor substrate, ensuring optimal performance and reliability.

Career Highlights

Yu-Hsiao Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to apply his expertise in semiconductor structures and contribute to advancements in technology. His innovative approach has positioned him as a valuable asset in the field.

Collaborations

Yu-Hsiao Lin has collaborated with notable colleagues, including Wei-Ming Wang and Yu-Hung Lin. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

In summary, Yu-Hsiao Lin is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His patent for a semiconductor structure demonstrates his commitment to innovation and excellence in his field.