Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Hsiao Lin

Kuo-Chung Yee

Yu-Hung Lin

Shih-Peng Tai

Wei-Ming Wang

A semiconductor structure includes a dielectric layer, a conductive pad embedded in the dielectric layer, a semiconductor substrate disposed on the dielectric layer and including a via opening with a notch in proximity to the dielectric layer, a through substrate via (TSV) disposed in the via opening of the semiconductor substrate and extending into the dielectric layer to land on the conductive pad, and a dielectric liner disposed in the via opening of the semiconductor substrate and filling the notch to laterally separate the TSV from the semiconductor substrate. A surface of the dielectric liner facing the TSV is substantially leveled with an inner sidewall of the dielectric layer facing the TSV.

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Taoyuan, Taiwan

Yu-Hsiao Lin