Yu-Hsiang Yang

Title: Yu-Hsiang Yang: Innovator in Memory Device Technology

Introduction

Yu-Hsiang Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 6 patents. His work focuses on innovative structures and methods that enhance the performance and efficiency of memory technologies.

Latest Patents

One of Yu-Hsiang Yang's latest patents is titled "ONON sidewall structure for memory device and method for making the same." This patent discloses a memory device that includes transistor devices located in both a memory region and a logic region. The transistor devices in the memory region feature sidewall spacers with a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Similarly, the transistor devices in the logic region also include sidewall spacers with a first oxide layer and nitride layers, showcasing the innovative design that Yu-Hsiang Yang has developed.

Career Highlights

Throughout his career, Yu-Hsiang Yang has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and King Dragon International Inc. His experience in these organizations has allowed him to refine his expertise in memory device technology and contribute to advancements in the field.

Collaborations

Yu-Hsiang Yang has collaborated with several talented individuals, including Po-Wei Liu and Wen-Tuo Huang. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in memory devices.

Conclusion

In summary, Yu-Hsiang Yang is a distinguished inventor whose work in memory device technology has led to significant advancements in the field. His innovative patents and collaborations with industry professionals highlight his commitment to pushing the boundaries of technology.