This inventor holds 2 USPTO granted patents. Top assignee: Advanced Semiconductor Engineering, Inc.. Active years: 2016-2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016-2018
Title: Innovations of Yu-Hsiang Hsiao in Semiconductor Technology
Introduction
Yu-Hsiang Hsiao is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device manufacturing.
Latest Patents
His latest patents include a semiconductor device and method for manufacturing the same. The first patent describes a semiconductor device that features a first circuit layer, a copper pillar adjacent to this layer, a second circuit layer, and a solder layer. The second circuit layer contains an electrical contact and a surface finish layer made from a combination of at least two materials: nickel, gold, and palladium. The solder layer, positioned between the copper pillar and the surface finish layer, consists of a first intermetallic compound (IMC) and a second IMC. The first IMC is a combination of copper, nickel, and tin, while the second IMC can be a combination of gold and tin, palladium and tin, or both.
The second patent also relates to a semiconductor device and its manufacturing method. This device includes a semiconductor die with a copper pillar and a semiconductor element featuring a surface finish layer. Similar to the first patent, the surface finish layer is composed of at least two of the materials: nickel, gold, and palladium. The solder layer again includes a first IMC and a second IMC, ensuring robust connections within the semiconductor device.
Career Highlights
Yu-Hsiang Hsiao is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and reliability of semiconductor devices.
Collaborations
He collaborates with notable colleagues such as Chiu-Wen Lee and Ping-Feng Yang, contributing to a dynamic research environment that fosters innovation.
Conclusion
Yu-Hsiang Hsiao's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile