Hefei, China

Yu-Cheng Liao

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Cxmt Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Cheng Liao. Retrieved from https://idiyas.com/inventor/yu-cheng-liao-b0p7fqyl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yu-Cheng Liao: Innovator in Semiconductor Technology

Introduction

Yu-Cheng Liao is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents

Yu-Cheng Liao holds a patent for a semiconductor structure and method for forming the same with multiple gate conductive layers having different characteristics. This patent describes a semiconductor structure that includes a gate structure located on a substrate. The gate structure consists of at least two gate conductive layers that share the same components but have different characteristic parameters. These parameters can include thickness, component content, or shape, which are essential for optimizing semiconductor performance.

Career Highlights

Yu-Cheng Liao is associated with Cxmt Corporation, where he applies his expertise in semiconductor technology. His work at the company has contributed to advancements in the industry, particularly in the development of innovative semiconductor solutions.

Collaborations

Some of his notable coworkers include Wenjie Liu and Joonsuk Moon, who collaborate with him on various projects within the semiconductor field.

Conclusion

Yu-Cheng Liao's contributions to semiconductor technology through his innovative patents and work at Cxmt Corporation highlight his role as a key figure in advancing electronic device capabilities. His ongoing efforts continue to shape the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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